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The role of deposition temperature in the formation of poly-SiGe alloy thin film in Si/Ge system is reported. For the set ofsamples deposited without any intentional heating, initiation of alloying starts upon post annealingat ∼ 500 °C leading to the formation of a-SiGe. Subsequently, poly-SiGe alloy phase could formonly at temperature ≥ 800 °C. Whereas, for the set of samples deposited at 500 °C, in-situ formation of poly-SiGe alloy thin film could be observed. The energetics of the incoming evaporated atoms and theirsubsequent diffusionsin the presence of the supplied thermal energy is discussed to understand possible reasons for lowering of formation temperature/energyof the poly-SiGe phase.The role of deposition temperature in the formation of poly-SiGe alloy thin film in Si/Ge system is reported. For the set ofsamples deposited without any intentional heating, initiation of alloying starts upon post annealingat ∼ 500 °C leading to the formation of a-SiGe. Subsequently, poly-SiGe alloy phase could formonly at temperature ≥ 800 °C. Whereas, for the set of samples deposited at 500 °C, in-situ formation of poly-SiGe alloy thin film could be observed. The energetics of the incoming evaporated atoms and theirsubsequent diffusionsin the presence of the supplied thermal energy is discussed to understand possible reasons for lowering of formation temperature/energyof the poly-SiGe phase. |
