| Popis: |
The photodetector is a key component in many applications, such as optical communication, image sensing, optical spectrometry, biological imaging and even radiation detection [ 1 – 6 ]. The silicon-on-insulator (SOI) technology has advantages, such as low leakage current, low parasitic capacitance and high resistance to radiation, and thus has been widely applied in integrated circuits with low power, high frequency and radiation-hardness [7 , 8] . Besides, SOI is widely used in photonics, thanks to the low loss of infrared light and the excellent ability to co-integrate electronic and photonic devices in the same chip. In this paper, we review several novel semiconductor photodetectors and image sensors developed by our group recently. These devices are fabricated on silicon-on-insulator (SOI) and two-dimensional (2D) substrates. They are based on novel device physics, and have extraordinary photodetection performances or unique functionalities compared to conventional devices. |
