Defect‐related recombination in InGaN‐lasers

Autor:	Georg Brüderl, Désirée Queren, Ansgar Laubsch, Lutgen, A. Avramescu, M. Schillgalies, Uwe Strauss
Rok vydání:	2008
Předmět:	Condensed matter physics Magnesium business.industry Doping chemistry.chemical_element Atmospheric temperature range Electroluminescence Condensed Matter Physics Laser law.invention chemistry law Optoelectronics Quantum efficiency business Quantum well Recombination
Zdroj:	physica status solidi c. 5:2192-2194
ISSN:	1610-1642 1862-6351
Popis:	We have studied the influence of impurities in InGaN lasers. A magnesium background doping in InGaN quantum wells increases non-radiative recombination significantly. Consequently, internal quantum efficiency decreases causing a large drop in laser performance. Electroluminescence measurements over a wide current and temperature range were used to study magnesium-related radiative and non-radiative recombination processes. Defect-related processes are thermally activated. Quenching of EL-intensity increases with magnesium concentration and is attributed to increased non-radiative recombination as a result of thermal release of bound holes. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::60cee48282d702a86830c1f9f47a5835 https://doi.org/10.1002/pssc.200778537 Zobrazit plný text záznamu Plný text