Characterisation of electronic and structural properties of thin silicon dioxide films by scanned probe microscopy
| Autor: | Mark E. Welland, M. P. Murrell |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Materials science
Silicon Silicon dioxide business.industry Oxide chemistry.chemical_element Nanotechnology Dielectric Atomic and Molecular Physics and Optics law.invention chemistry.chemical_compound Capacitor chemistry law Microscopy Silicon carbide Optoelectronics Electrical measurements business Instrumentation |
| Zdroj: | Scanning. 15:251-256 |
| ISSN: | 0161-0457 |
| DOI: | 10.1002/sca.4950150503 |
| Popis: | This paper concerns the application of scanned probe microscopy to the study of thin silicon dioxide films. We show how the formation of 7 nm diameter silicon carbide particles on a silicon surface during high temperature processing affects the quality of subsequently grown oxide. To measure the local dielectric properties of thin oxides we have developed a new type of probe measurement which allows high resolution surface imaging, based on an atomic force microscope, combined with local electrical measurements. The spatial resolution of the electrical measurements was shown to be < 40 nm. Applying the technique to 500 nm capacitors fabricated on device quality oxide it was shown that some capacitors broke down during imaging while others remained stable at electric fields up to 30 MVcm−1. This higher breakdown strength may have substantial impact on future electronic device reliablity and performance. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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