High-Speed and Low-Power Non-Return-to-Zero Delayed Flip-Flop Circuit Using Resonant Tunneling Diode/High Electron Mobility Transistor Integration Technology
| Autor: | Kwang-Seok Seo, Seong-Jin Yeon, Hyung-Tae Kim |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) business.industry General Engineering Analytical chemistry Resonant-tunneling diode General Physics and Astronomy Hardware_PERFORMANCEANDRELIABILITY High-electron-mobility transistor Substrate (electronics) Dissipation law.invention Power (physics) Power supply voltage law Hardware_INTEGRATEDCIRCUITS Optoelectronics business Non-return-to-zero Flip-flop Hardware_LOGICDESIGN |
| Zdroj: | Japanese Journal of Applied Physics. 46:2300-2305 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | A high-speed and low-power delayed flip-flop circuit with non-return-to-zero mode output using a new negative differential resistance logic element is proposed and fabricated using resonant tunneling diode (RTD)/high electron mobility transistor (HEMT) integration technology on an InP substrate. The number of devices used in the delayed flip-flop and the power dissipation has been significantly reduced by using the proposed scheme. The operation of the fabricated delayed flip-flop is demonstrated up to 26 Gb/s with a very low power dissipation of about 2.8 mW at a power supply voltage of 0.9 V. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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