Theoretical Analysis of the Effect of dU/dt in 4H–SiC Thyristor Structures

Autor:	A. G. Tandoev, T. T. Mnatsakanov, S. N. Yurkov
Rok vydání:	2018
Předmět:	010302 applied physics Materials science Physics and Astronomy (miscellaneous) Computer simulation business.industry Thyristor 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences 0103 physical sciences Optoelectronics 0210 nano-technology business Realization (systems) Voltage
Zdroj:	Technical Physics. 63:1497-1503
ISSN:	1090-6525 1063-7842
DOI:	10.1134/s1063784218100250
Popis:	On the basis of numerical simulation, specificities of the effect of dU/dt in 4H–SiC thyristor structures, related to realization of the recently discovered triggering α-mechanism are analyzed. It is shown that one of the manifestations of this mechanism is a catastrophic reduction in the voltage blocked by a thyristor with an increase in temperature of the structure. Practical ways of eliminating this effect are discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::60a6278d922451c9f2ebcf9d8dc29f88 https://doi.org/10.1134/s1063784218100250 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
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