AlInAs/GaInAs metal-semiconductor-metal photodiodes with very low dark current
| Autor: | A. Scavennec, A Temmar, J.F Palmier, J.P Praseuth |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
Materials science
Passivation business.industry Detector Photodetector Condensed Matter Physics Capacitance Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Photodiode law.invention Responsivity law Electrode Optoelectronics Electrical and Electronic Engineering business Dark current |
| Zdroj: | Microelectronic Engineering. 15:267-270 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(91)90226-4 |
| Popis: | AlInAs/GaInAs Metal-Semiconductor-Metal photodiodes have been fabricated by MBE. The structure incorporates an AlGaInAs graded region to avoid photocarrier trapping and to provide surface passivation. Low dark current and capacitance as well as good responsivity and large bandwidth have been obtained. These combined properties confirm the potential of AlInAs/GaInAs MSM detectors for long-wavelength (1.3-1.55?m) low-noise integrated photoreceiver applications. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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