| Autor: |
Tetsu Kawasaki, Masato Kushibiki, Eiichi Nishimura, Arisa Hara, Junichi Kitano, Shinichi Hatakeyama, Hideo Shite, Satoru Shimura, Kathleen Nafus, Shinji Kobayashi, Roel Gronheid, Alessandro Vaglio-Pret |
| Rok vydání: |
2010 |
| Předmět: |
|
| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.846318 |
| Popis: |
The reduction of line width roughness (LWR) is a critical issue in developing resist materials for EUV lithography and LWR represents a trade-off between sensitivity and resolution. Additional post pattern processing is expected as an LWR reduction technique without impact to resolution or sensitivity. This paper reports the LWR reducing effect of a post-development resist-smoothing process. Approximately 20% improvement in LWR for ArF immersion exposed resist patterns was achieved for two types of resist and two illumination conditions. The LWR after BARC etching in which resist-smoothing was applied was decreased relative to the case in which smoothing was not applied. Resist-smoothing process also reduced LWR of an EUV exposure resist pattern by approximately 10%. These results confirm that resistsmoothing process is robust for different resists and illumination conditions. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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