Hydrogen Plasma Passivation and Improvement of the Photovoltaic Properties of a GaAs Solar Cell Grown on Si Substrate
| Autor: | Gang Wang, Tetsuo Soga, Masayoshi Umeno, Kouji Ohtsuka, Takashi Jimbo |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Materials science
integumentary system Passivation Hydrogen Photovoltaic system Inorganic chemistry Energy conversion efficiency General Engineering food and beverages General Physics and Astronomy chemistry.chemical_element Plasma Chemical vapor deposition law.invention chemistry Chemical engineering law Solar cell Metalorganic vapour phase epitaxy |
| Zdroj: | Japanese Journal of Applied Physics. 38:3504 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.38.3504 |
| Popis: | The effects of hydrogen (H) plasma passivation of metalorganic chemical vapor deposition (MOCVD) grown GaAs solar cells on a Si substrate have been studied. After H plasma passivation and postannealing in AsH3 ambient, the conversion efficiency of the GaAs solar cell grown on a Si substrate is increased from 16.3 to 17.2% at AM0. This improvement is thought to be due to the passivation of the defect-associated recombination centers by H plasma exposure and the recovery of the plasma-induced damages by postannealing the passivated solar cells in AsH3 ambient at 450°C. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|