Demonstration of CMOS Integration With High-Voltage Double-Implanted MOS in 4H-SiC

Autor:	Chih-Fang Huang, Jia-Ching Hung, Bing-Yue Tsui, Jheng-Yi Jiang, Kang-Min Lo, Kung-Yen Lee
Rok vydání:	2021
Předmět:	010302 applied physics Materials science business.industry High voltage Ring oscillator 01 natural sciences Electronic Optical and Magnetic Materials PMOS logic CMOS 0103 physical sciences MOSFET Inverter Optoelectronics Electrical and Electronic Engineering business NMOS logic Voltage
Zdroj:	IEEE Electron Device Letters. 42:78-81
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2020.3038179
Popis:	In this work, we demonstrate CMOS integration that is fully compatible with a commercial double-implanted MOS (DMOS) process in 4H-SiC without requiring additional masks and cost. The characteristics of the NMOS, the PMOS, the CMOS inverter, and the ring oscillators are measured up to 175 °C. Propagation delay is reduced from 117 ns at room temperature to 17.8 ns at 175 °C, thanks to the increased current capability of both the NMOS and the PMOS. The body effect from the high substrate voltage on the PMOS is also investigated. The characteristics of the PMOS and the CMOS inverter are measured for a substrate voltage up to 800 V. The propagation delay for the ring oscillator is also measured when the substrate voltage is 300 V.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::608072e706539cac8fdae8d81dcb6494 https://doi.org/10.1109/led.2020.3038179 Zobrazit plný text záznamu