Studies of Ge-Sb-Te Phase Change Materials At and Above Melting Temperatures and Set to Reset Transition of Memory Devices

Autor:	Guy C. Wicker, Semyon D. Savransky
Rok vydání:	2010
Předmět:	Phase change Semiconductor Materials science Condensed matter physics business.industry Melting temperature Alloy engineering engineering.material business Endothermic process Reset (computing)
Zdroj:	MRS Proceedings. 1251
ISSN:	1946-4274 0272-9172
Popis:	The results of calorimetric and electrical studies of bulk Ge2Sb2Te5 and GeSb2Te4 alloys around melting temperature Tm are presented together with characteristics of phase-change memory devices from such alloys. The endothermic melting region is wider in Ge2Sb2Te5 than GeSb2Te4. Electrical resistivities of the alloys in this region have semiconductor characteristics. The width of the melting region correlates with breadth of set to reset transition in devices. This empirical correlation is probably important for alloy selection for multi-level memory cells.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::60801cd321e4e1bf8e594db75d80931f https://doi.org/10.1557/proc-1251-h03-02 Zobrazit plný text záznamu Full text from SpringerLink