Defect Characterization in Metal-Oxide-Semiconductor Field-Effect-Transistors with Trench Gates by Electron Beam-Induced Current Technique
| Autor: | Y. Ishiwata, Hajime Tomokage, N. Sonoda, Masahiro Kawakami, H. Souno |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Materials science
business.industry Electron beam-induced current Condensed Matter Physics Atomic and Molecular Physics and Optics Characterization (materials science) Metal Oxide semiconductor visual_art Trench visual_art.visual_art_medium Optoelectronics General Materials Science Field-effect transistor business Trench gate |
| Zdroj: | Solid State Phenomena. :407-412 |
| ISSN: | 1662-9779 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|