Power Dissipation of WSe2 Field-Effect Transistors Probed by Low-Frequency Raman Thermometry
| Autor: | Zahra Hemmat, Arnab K. Majee, Zlatan Aksamija, Poya Yasaei, Cameron J. Foss, Amirhossein Behranginia, Amin Salehi-Khojin |
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| Rok vydání: | 2018 |
| Předmět: |
Coupling
Materials science Condensed matter physics Anharmonicity 02 engineering and technology Low frequency Dissipation 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences chemistry.chemical_compound symbols.namesake chemistry Thermal symbols Tungsten diselenide General Materials Science Field-effect transistor 0210 nano-technology Raman spectroscopy |
| Zdroj: | ACS Applied Materials & Interfaces. 10:24892-24898 |
| ISSN: | 1944-8252 1944-8244 |
| Popis: | The ongoing shrinkage in the size of two-dimensional (2D) electronic circuitry results in high power densities during device operation, which could cause a significant temperature rise within 2D channels. One challenge in Raman thermometry of 2D materials is that the commonly used high-frequency modes do not precisely represent the temperature rise in some 2D materials because of peak broadening and intensity weakening at elevated temperatures. In this work, we show that a low-frequency E2g2 shear mode can be used to accurately extract temperature and measure thermal boundary conductance (TBC) in back-gated tungsten diselenide (WSe2) field-effect transistors, whereas the high-frequency peaks (E2g1 and A1g) fail to provide reliable thermal information. Our calculations indicate that the broadening of high-frequency Raman-active modes is primarily driven by anharmonic decay into pairs of longitudinal acoustic phonons, resulting in a weak coupling with out-of-plane flexural acoustic phonons that are responsi... |
| Databáze: | OpenAIRE |
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