Growth of Silicon Nanowires by Heating Si Substrate

Autor:	Xing Ying-Jie, Xue Zeng-Quan, Feng Sun-Qi, YU Da-Peng, Yan Han-Fei, Hang Qing-Ling, XI Zhong-He
Rok vydání:	2002
Předmět:	Amorphous silicon Materials science Nanowire General Physics and Astronomy Nanotechnology Nanowire battery law.invention Catalysis chemistry.chemical_compound Si substrate chemistry Chemical engineering law Vapor–liquid–solid method Silicon nanowires
Zdroj:	Chinese Physics Letters. 19:240-242
ISSN:	1741-3540 0256-307X
DOI:	10.1088/0256-307x/19/2/331
Popis:	Amorphous silicon nanowires were prepared by heating an Si substrate at high temperatures using an Ni (or Au) catalyst. The nanowires have a diameter of 10-40 nm and a length of up to several tens of micrometres. Unlike the well-known vapour-liquid-solid mechanism, a solid-liquid-solid mechanism appeared to control the nanowire growth. The heating process had a strong influence on the growth of silicon nanowires. It was found that ambient gas was necessary to grow nanowires. This method can be used to prepare other kinds of nanowires.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::607626ba1eda74b8f16cd8a8549b1958 https://doi.org/10.1088/0256-307x/19/2/331 Zobrazit plný text záznamu