High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectors

Autor: E. Pelve, C. G. Bethea, V. O. Shen, S. J. Hsieh, B. F. Levine, R. R. Abbott, G. Hasnain
Rok vydání: 1990
Předmět:
Zdroj: Applied Physics Letters. 56:851-853
ISSN: 1077-3118
0003-6951
Popis: By increasing the quantum well barrier width, we have dramatically reduced the tunneling dark current by an order of magnitude and thereby significantly increased the blackbody detectivity D*BB. For a GaAs quantum well infrared detector having a cutoff wavelength of λc=10.7 μm, we have achieved D*BB =1.0×1010 cm (Hz)1/2/W at T=68 K, a temperature which is readily achievable with a cryogenic cooler.
Databáze: OpenAIRE