Assessing intrinsic and extrinsic end-of-life risk using functional SRAM wafer level testing

Autor:	Torsten Klick, Vivek Joshi, Fan Chen, Akash Kumar, Rakesh Ranjan, Yuncheng Song, T. Schaefer, Randy W. Mann, William McMahon, Sriram Balasubramanian, T. Nigam, Y. Mamy Randriamihaja, B. Parameshwaran
Rok vydání:	2015
Předmět:	Engineering Yield (engineering) business.industry Transistor Temperature measurement Reliability engineering law.invention law High-temperature operating life Electronic engineering Wafer Static random-access memory business Voltage drop Degradation (telecommunications)
Zdroj:	IRPS
Popis:	Extended 6 Transistors (6T) SRAM (Static Random-Access Memory) characterization is used to measure degradation while separating intrinsic from extrinsic yield and accounting for yield assessment challenges such as voltage drop and measurement variability. Separation of extrinsic yield pre- and post-stress reveals weak yield fixes and reduces HTOL (High Temperature Operating Life) failure risk.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::607166eea23089f10338cdd99e41ed29 https://doi.org/10.1109/irps.2015.7112759 Zobrazit plný text záznamu