Inter‐Flake Quantum Transport of Electrons and Holes in Inkjet‐Printed Graphene Devices
| Autor: | Oleg Makarovsky, Lyudmila Turyanska, Gustavo F. Trindade, Alexander G. Balanov, Feiran Wang, Mark Greenaway, Richard J.M. Hague, Graham A. Rance, Ricky D. Wildman, Zakhar R. Kudrynskyi, Jonathan H. Gosling, T. Mark Fromhold, Christopher Tuck, Nathan D. Cottam |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Graphene Nanotechnology 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic packing factor 01 natural sciences 0104 chemical sciences Electronic Optical and Magnetic Materials Photodiode law.invention Characterization (materials science) Biomaterials law Percolation Electrochemistry Field-effect transistor 0210 nano-technology Ohmic contact Quantum tunnelling |
| Zdroj: | Advanced Functional Materials. 31:2007478 |
| ISSN: | 1616-3028 1616-301X |
| DOI: | 10.1002/adfm.202007478 |
| Popis: | © 2020 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH 2D materials have unique structural and electronic properties with potential for transformative device applications. However, such devices are usually bespoke structures made by sequential deposition of exfoliated 2D layers. There is a need for scalable manufacturing techniques capable of producing high-quality large-area devices comprising multiple 2D materials. Additive manufacturing with inks containing 2D material flakes is a promising solution. Inkjet-printed devices incorporating 2D materials have been demonstrated, however there is a need for greater understanding of quantum transport phenomena as well as their structural properties. Experimental and theoretical studies of inkjet-printed graphene structures are presented. Detailed electrical and structural characterization is reported and explained by comparison with transport modeling that include inter-flake quantum tunneling transport and percolation dynamics. The results reveal that the electrical properties are strongly influenced by the flakes packing fraction and by complex meandering electron trajectories, which traverse several printed layers. Controlling these trajectories is essential for printing high-quality devices that exploit the properties of 2D materials. Inkjet-printed graphene is used to make a field effect transistor and Ohmic contacts on an InSe phototransistor. This is the first time that inkjet-printed graphene has successfully replaced single layer graphene as a contact material for 2D metal chalcogenides. |
| Databáze: | OpenAIRE |
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