Very high current gain enhancement by substrate biasing of lateral bipolar transistors on thin SOI
| Autor: | Bengt Edholm, Jörgen Olsson, Anders Söderbärg |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Materials science
business.industry Heterostructure-emitter bipolar transistor Bipolar junction transistor food and beverages Silicon on insulator Biasing Substrate (electronics) Condensed Matter Physics Bipolar transistor biasing Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Current injection technique Optoelectronics sense organs Electrical and Electronic Engineering Current (fluid) business |
| Zdroj: | Microelectronic Engineering. 22:379-382 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(93)90192-8 |
| Popis: | Effects of substrate biasing of lateral bipolar transistors (LBTs) on thin SOI have been investigated. It was found that the current gain can be increased by a factor of several decades. This effect is explained by a changed base charge condition when the substrate is biased. It can be concluded that the investigated effect enables LBTs on SOI to get higher current gain than comparable bulk devices. |
| Databáze: | OpenAIRE |
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