Development of standard samples with programmed defects for evaluation of pattern inspection tools for 7-nm and smaller nodes
Autor: | Takamitsu Nagai, Susumu Iida, Takayuki Uchiyama |
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Rok vydání: | 2019 |
Předmět: |
Materials science
business.industry Scanning electron microscope Mechanical Engineering Resolution (electron density) 02 engineering and technology Surface finish 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Metrology 010309 optics 0103 physical sciences Charge control Optoelectronics Node (circuits) Wafer Electrical and Electronic Engineering 0210 nano-technology business Lithography |
Zdroj: | Journal of Micro/Nanolithography, MEMS, and MOEMS. 18:1 |
ISSN: | 1932-5150 |
DOI: | 10.1117/1.jmm.18.3.033503 |
Popis: | Background: Continued shrinkage of pattern size has caused difficulties in detecting small defects. Multibeam scanning electron microscopy (SEM) is a potential method for pattern inspection below 7-nm node. Performance of the tool depends on charge control, resolution, and defect detection capability. Aim: The goal of this study is to develop a method for evaluating the performance of multibeam SEM for 7-nm nodes. Approach: By developing various standard samples with programmed defects (PDs) on 12 in. Si wafer, we evaluate the performance of multibeam SEM. Results: The first wafer had line and space (LS) patterns and PDs with varying contrast. A second wafer had various shaped small PDs, ∼5 nm in size in 16- to 12-nm half-pitch LS patterns. A third wafer with extremely small PDs of around 1 nm was fabricated in LS patterns with ultralow line-edge roughness (LER) of less than 1 nm. The first wafer was effective for charge control, whereas second and third wafer confirms resolution and defect detection capability. Conclusions: A set of minimum three standard wafer samples is effective to confirm the performance of multibeam SEM for below 7-nm nodes. Besides, we proposed a method to verify the LER values measured by a critical-dimension SEM. |
Databáze: | OpenAIRE |
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