Distribution of luminescence centers in the bulk of undoped, Fe-doped, and Cr-doped CVD ZnSe polycrystals studied by two-photon confocal microscopy
| Autor: | M. I. Studenikin, E. M. Gavrishchuk, V. P. Kalinushkin, N. N. Il’ichev, V. A. Chapnin, V. P. Danilov, N A Timofeeva, A. A. Gladilin, Anastasiya V. Ryabova, Oleg V. Uvarov, V. B. Ikonnikov |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Dopant business.industry General Chemical Engineering Metals and Alloys chemistry.chemical_element 02 engineering and technology 01 natural sciences Inorganic Chemistry Crystal Chromium 020210 optoelectronics & photonics Two-photon excitation microscopy chemistry 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Materials Chemistry Optoelectronics Grain boundary Crystallite Thin film Luminescence business |
| Zdroj: | Inorganic Materials. 52:1108-1114 |
| ISSN: | 1608-3172 0020-1685 |
| DOI: | 10.1134/s0020168516110017 |
| Popis: | Edge and defective-impurity luminescence in polycrystalline CVD ZnSe has been studied in the range 0.46–0.73 μm by two-photon confocal microscopy. We have obtained luminescence intensity distribution maps for undoped, iron-doped, and chromium-doped ZnSe samples at depths of up to 1 mm with a spatial resolution of a few microns. It has been shown that crystal regions with low dopant concentrations contain centers that luminesce in the ranges 520–580 and >670 nm. The parts of the crystals with high iron and chromium concentrations contain centers that suppress the edge and defective-impurity (520–580 nm) luminescence. We discuss the nature of these centers and demonstrate the possibility of assessing the luminescence characteristics of grain boundaries in CVD ZnSe. |
| Databáze: | OpenAIRE |
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