A tunneling field-effect transistor with 25 nm metallurgical channel length
| Autor: | M. J. Yang, C. H. Yang, Brian R. Bennett, Fu-Cheng Wang, W. E. Zhang, R. A. Wilson, D. R. Stone |
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| Rok vydání: | 1997 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) business.industry Transistor Tunneling field effect transistor Heterojunction Hardware_PERFORMANCEANDRELIABILITY Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Thermal conduction law.invention law Thin-film transistor Hardware_INTEGRATEDCIRCUITS Optoelectronics Field-effect transistor business Quantum tunnelling Hardware_LOGICDESIGN Communication channel |
| Zdroj: | Applied Physics Letters. 70:3005-3007 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.118731 |
| Popis: | A tunneling field-effect transistor with an ultrashort channel-length of 25 nm has been experimentally realized using InAs/AlSb heterostructures. The conduction between the source and the drain is through a sequential process, including tunneling and drift-diffusion mechanisms. According to its operating principle, the transistor is inherently free of the conventional short-channel effects. The results demonstrate a new scheme of building nanometer-scale transistors. |
| Databáze: | OpenAIRE |
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