Highly Efficient Nitrogen Doping Into GaAs Using Low-Energy Nitrogen Molecular Ions

Autor:	Hirokazu Sanpei, Yasuhiro Fukuzawa, Shinji Kimura, Yunosuke Makita, Takayuki Shima
Rok vydání:	1998
Předmět:	Materials science Photoluminescence Ion beam chemistry Impurity Atom Inorganic chemistry Analytical chemistry chemistry.chemical_element Irradiation Current density Nitrogen Ion
Zdroj:	MRS Proceedings. 510
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-510-73
Popis:	Low-energy N2+ molecular-ions were irradiated during the epitaxial growth of GaAs. Ion acceleration energy and ion beam current density were varied in the range of 30-200 eV and 3-37 nA/cm2, respectively. GaAs growth rate was kept constant at 1µm/ h and the thickness of N-doped GaAs layer was about 1 µm. N concentration was obtained by using secondary ion mass spectroscopy. Strong N-related emissions were observed in the low-temperature photoluminescence spectra, which indicates that N atom is efficiently substituted at As site and is optically active as an isoelectronic impurity
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::603c8fcd464cec1c06e1410da1a60d3f https://doi.org/10.1557/proc-510-73 Zobrazit plný text záznamu Full text from SpringerLink