The properties of Si/Si1-xGex films grown on Si substrates by chemical vapor deposition
| Autor: | I. S. Gergis, H. M. Manasevit, A. B. Jones |
|---|---|
| Rok vydání: | 1983 |
| Předmět: |
Materials science
Superlattice Doping Analytical chemistry Chemical vapor deposition Combustion chemical vapor deposition Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Carbon film Materials Chemistry Electrical and Electronic Engineering Layer (electronics) Deposition (law) |
| Zdroj: | Journal of Electronic Materials. 12:637-651 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/bf02676793 |
| Popis: | A growth parameter study was made to determine the proper of a SiGe superlattice-type configuration grown on Si substrates by chemical vapor deposition (CVD). The study included such variables as growth temperature, layer composition, layer thickness, total film thickness, doping concentrations, and film orientation. Si and SiGe layers were grown using SiH4 as the Si source and GeH4 as the Ge source. When intentional doping was desired, diluted diborane for p-type films and phosphine for n-type films were used. The study led to films grown at ∼1000°C with mobilities from ∼20 to 40 percent higher than that of epitaxial Si layers and ∼100 percent higher than that of epitaxial SiGe layers grown on (100) Si in the same deposition system for net carrier concentrations of ∼8x1015 cm-3 to ∼2x1017 cm-3. Enhanced mobilities were found in multilayer (100)-oriented Si/Si1-xGex films for layer thicknesses ≥400A, for film thicknesses >2μm, and for layers with x = 0.15. No enhanced mobility was found for (111)-oriented films and for B-doped multilayered (100)-orlented films. |
| Databáze: | OpenAIRE |
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