Advanced rad hard SRAM development and hardware test results

Autor: Nadim F. Haddad, Tri Hoang, Jason F. Ross, Ernesto Chan, S. Doyle, R. Lawrence
Rok vydání: 2007
Předmět:
Zdroj: 2007 International Semiconductor Device Research Symposium.
DOI: 10.1109/isdrs.2007.4422259
Popis: Electrical and radiation test results will be presented on a deep submicron radiation hardened 16 Mb SRAM IC. The significant technology development and device design challenges will be chronicled from initial SEE modeling, to testchip hardware, to final electrical characterization and radiation test validation. Model to hardware correlation results and model validation will be described. These results pave the way for further sub-100 nm device development.
Databáze: OpenAIRE