Novel self-planarizing CVD oxide for interlayer dielectric applications

Autor:	A. Kiermasz, R. Wilby, T. Nishimura, Y. Hayashide, Matsuura, K. Beekmann, Hideo Kotani, C.D. Dobson, H. Iuchi
Rok vydání:	2002
Předmět:	chemistry.chemical_compound Materials science chemistry business.industry Oxide Electronic engineering Optoelectronics Chemical vapor deposition Dielectric Dielectric thin films Absorption (chemistry) business Planarity testing
Zdroj:	Proceedings of 1994 IEEE International Electron Devices Meeting.
Popis:	This paper presents a highly-reliable interlayer dielectric process using a novel CVD method. The key to the process is a unique chemistry of SiH/sub 4/ and H/sub 2/O/sub 2/, which generates a liquid intermediate filling very narrow gaps and providing excellent planarity. Resistances of via-hole chains using this process are lower and more stable compared with those using P-TEOS and SOG process. This is due to a lower water content and a low absorption property of this self-planarizing CVD oxide. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::602a24cb5ce14284a035891716448ca1 https://doi.org/10.1109/iedm.1994.383450 Zobrazit plný text záznamu