Autor: |
A. Kiermasz, R. Wilby, T. Nishimura, Y. Hayashide, Matsuura, K. Beekmann, Hideo Kotani, C.D. Dobson, H. Iuchi |
Rok vydání: |
2002 |
Předmět: |
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Zdroj: |
Proceedings of 1994 IEEE International Electron Devices Meeting. |
Popis: |
This paper presents a highly-reliable interlayer dielectric process using a novel CVD method. The key to the process is a unique chemistry of SiH/sub 4/ and H/sub 2/O/sub 2/, which generates a liquid intermediate filling very narrow gaps and providing excellent planarity. Resistances of via-hole chains using this process are lower and more stable compared with those using P-TEOS and SOG process. This is due to a lower water content and a low absorption property of this self-planarizing CVD oxide. > |
Databáze: |
OpenAIRE |
Externí odkaz: |
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