Preparation of Magnetic Tunnel Transistors with Double Tunnel Junctions
| Autor: | Mutsuko Jimbo, Yuji Fujiwara, Shigeru Shiomi, T. Kobayashi, H. Nakanishi, H. Omae |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
business.industry Transistor Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention law Transfer ratio Condensed Matter::Superconductivity Physics::Accelerator Physics Optoelectronics Voltage dependence Electrical and Electronic Engineering business Instrumentation Hot electron Common emitter Voltage |
| Zdroj: | Journal of the Magnetics Society of Japan. 30:188-191 |
| ISSN: | 0285-0192 |
| DOI: | 10.3379/jmsjmag.30.188 |
| Popis: | Magnetic tunnel transistors (MTTs) with double tunnel junctions were prepared in order to investigate the emitter voltage dependence of a magneto-current (MC). A three-terminal structure was fabricated, using metal shadow masks. It was observed that hot electrons contributed to a collector current. A transfer ratio of over 10-3 was obtained in an MTT with double tunnel junctions. The MC decreased gradually with increasing emitter voltage. The emitter voltage at which the MC decreased to half its original value was over 1.5 V. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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