| Autor: |
Rodney A. McKee, F. J. Walker, C.A. Billman, Hyunsang Hwang, Sanghun Jeon |
| Rok vydání: |
2003 |
| Předmět: |
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| Zdroj: |
Digest. International Electron Devices Meeting. |
| DOI: |
10.1109/iedm.2002.1175996 |
| Popis: |
We report on the electrical characteristics of epitaxially grown SrTiO/sub 3/ on p-Si[100] by molecular beam epitaxy (MBE). For 100 /spl Aring/-thick SrTiO/sub 3/ films, the equivalent oxide thickness (EOT) and leakage current density are 5.4 /spl Aring/ and 0.7 mA/cm/sup 2/(@Vg = V/sub FB/-1 V), respectively. Dispersion and hysteresis characteristics are negligible. As deposited samples show relatively high fixed oxide charge density and interface state density which might be explained by incomplete oxidation of the metal layer. Low temperature (< 450/spl deg/C) post-metal forming gas annealing (FGA) which can passivate dangling bonds, significantly reduces the interface state density and fixed oxide charge density. The conduction mechanism of SrTiO/sub 3/ under positive and negative gate bias can be explained by Schottky emission and the Poole-Frenkel (P-F) mechanism, respectively. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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