Optoelectronic Nonvolatile Memories Using Graphene/Hexagonal Boron Nitride/Rhenium Disulfide Heterostructure

Autor:	Jiyou Jin, Chuanchao Zhu, Yanrong Wang, Zhongpu Wang, Zhisheng Peng, Kang Peng, Hui Liu, Haonan Wei, Weiguo Chu, Weimin Fan, Yong Jun Li, Lianfeng Sun
Rok vydání:	2022
Předmět:	Materials Chemistry Electrochemistry Electronic Optical and Magnetic Materials
Zdroj:	ACS Applied Electronic Materials. 4:2964-2969
ISSN:	2637-6113
DOI:	10.1021/acsaelm.2c00409
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5ff967a2fbea5d9d27f9355a60b2e65b https://doi.org/10.1021/acsaelm.2c00409 Zobrazit plný text záznamu