Demonstration of ultra-thin tantalum capacitors on silicon substrates for high-frequency and high-efficiency power applications
| Autor: | Himani Sharma, Saumya Gandhi, Pulugurtha Markondeya Raj, Kamil-Paul Rataj, Rao Tummala, Parthasarathi Chakraborti |
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| Rok vydání: | 2015 |
| Předmět: |
Electrolytic capacitor
Tantalum capacitor Materials science Silicon business.industry Tantalum Electrical engineering chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY Dielectric Filter capacitor law.invention Capacitor Film capacitor chemistry Hardware_GENERAL law Hardware_INTEGRATEDCIRCUITS Optoelectronics business |
| Zdroj: | 2015 IEEE 65th Electronic Components and Technology Conference (ECTC). |
| DOI: | 10.1109/ectc.2015.7159917 |
| Popis: | This paper describes an innovative scheme for integrating thinfilm tantalum (Ta) capacitors on active silicon substrates, an approach that can serve as a roadmap for the potential integration of ultra-thin high density capacitors in near future. The paper describes a new 3D concept for ultra-miniaturized, multi-functional and relatively low-cost power converter modules. The scheme consists of planar tantalum (Ta) capacitors by forming Ta 2 O 5 (30–120 nm thick) dielectric and attaching directly to active or passive Si substrates using ultra-loss dielectrics (Zeon, ZS-100). Capacitors attached directly on Si allow for shorter interconnection length ( 100 MHz) with fewer Ta capacitors on active Si. The paper focuses on capacitor fabrication of ultra-thin Ta foils (< 5µm) and their integration on ultra-thin active Si for lowering the parasitics. Consequently, electrical characterization of the above capacitors demonstrates the fundamental electrical superiority of the 3D integrated Ta capacitors. |
| Databáze: | OpenAIRE |
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