Increase of electrical activation and mobility of Si‐doped GaAs, grown at low substrate temperatures, by the migration‐enhanced epitaxy method

Autor:	Bijan Tadayon, Michael G. Spencer, G. L. Harris, L.F. Eastman, J. Griffin, Saied Tadayon
Rok vydání:	1990
Předmět:	Electron mobility Photoluminescence Silicon Doping Analytical chemistry General Physics and Astronomy chemistry.chemical_element Substrate (electronics) Epitaxy symbols.namesake chemistry symbols Thin film Raman spectroscopy
Zdroj:	Journal of Applied Physics. 67:589-591
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.345202
Popis:	Si‐doped GaAs layers were grown by the migration‐enhanced epitaxy (MEE) method and by the conventional molecular‐beam epitaxy (MBE) method, for the substrate temperatures between 220 and 670 °C. For the layers grown below 400 °C, the Si activation and mobility of the MEE layers are significantly higher than those of the MBE layers. For substrate temperatures above 400 °C, the MEE and MBE layers have roughly similar Si activation and mobility. The Raman and 4‐K photoluminescence spectra of the layers are consistent with the measured electron concentrations. This work suggests that for Si doping in GaAs at low substrate temperatures (below 400 °C), the MEE method is a very desirable alternative to the conventional MBE method.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5fe98a5c3fb62c16a001059e9b7c70f4 https://doi.org/10.1063/1.345202 Zobrazit plný text záznamu