Plasma Enhanced Atomic Layer Deposition of ZrO2: A Thermodynamic Approach

Autor:	Mickael Gros-Jean, Jérôme Roy, Stéphane Coindeau, Ioana Nuta, Blanka Detlefs, C. Wyon, Yanyu Mi, Fabien Volpi, Christine Martinet, Elisabeth Blanquet, Jorg Zegenhagen, Béatrice Doisneau, Denis Monnier
Rok vydání:	2011
Předmět:	010302 applied physics Atomic layer deposition Materials science 0103 physical sciences Analytical chemistry 02 engineering and technology Plasma 021001 nanoscience & nanotechnology 0210 nano-technology 01 natural sciences 7. Clean energy Plasma processing
Zdroj:	ECS Transactions. 35:497-513
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.3572301
Popis:	In the pursuit of smaller and faster devices manufacture, integration of new materials exhibiting a high dielectric permittivity is going on to replace silicon oxide SiO2 in Metal/Insulator/Metal (MIM) capacitors and in Dynamic Random Access Memory (DRAM). Among these materials, the zirconium oxide, ZrO2, in its highest dielectric permittivity phase (the high temperature tetragonal one) is investigated. Atomic Layer Deposition (ALD) of out-of-equilibrium ZrO2 thin films in 3D architectures is explored using various approaches: evaluation of the zirconium gaseous precursor, influence of operating conditions, thermal behavior of the deposited films. Thermodynamic models are used to better understand the film growth.
Databáze:	OpenAIRE
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