60 GHz compact low noise amplifier in 65 nm CMOS

Autor:	J.W. Kunze, Pierre Mayr, Attila Bilgic, C. Weyers, Josef Hausner
Rok vydání:	2009
Předmět:	Engineering business.industry Transistor Electrical engineering Y-factor Noise figure Low-noise amplifier law.invention CMOS law Optoelectronics Electrical and Electronic Engineering Wideband business Current density Communication channel
Zdroj:	Electronics Letters. 45:1035
ISSN:	0013-5194
DOI:	10.1049/el.2009.0518
Popis:	A single-ended low noise amplifier in 65 nm CMOS for applications at 60 GHz is presented. Its measured gain and noise figure at the centre frequency of 57 GHz are 19.1 dB and 5.5 dB, respectively, and it provides wideband matching. Transistors in the design have an asymmetrically fingered layout which reduces parasitic capacitances while simultaneously allowing for higher channel current densities.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5fdf690ec61f45f83cd0594bb415fe27 https://doi.org/10.1049/el.2009.0518 Zobrazit plný text záznamu