Wafer Backside Cleaning Strategies for High-k/Metal Gate Processing

Autor:	Els Kesters, R. De Waele, S. Degendt, Karine Kenis, Rita Vos, Denis Shamiryan, Tom Schram, Sylvain Garaud, Gabriela Catana, Marcel Lux, Harald Kraus, Wim Deweerd, James Snow, Paul Mertens
Rok vydání:	2005
Předmět:	Materials science Silicon business.industry chemistry.chemical_element Nitride Condensed Matter Physics Atomic and Molecular Physics and Optics Metal chemistry visual_art visual_art.visual_art_medium Particle Optoelectronics General Materials Science Wafer Metal gate business High-κ dielectric
Zdroj:	Solid State Phenomena. :241-244
ISSN:	1662-9779
Popis:	In this work the removal of different metallic and particulate contaminants relevant for high-k/metal gate processing is studied. Best cleaning efficiency of both silicon and nitride substrates is achieved using a HF/HNO3-based cleaning resulting in a particle removal efficiency higher than 90% and metal removal down to 1010 at/cm2.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5fde0a5436df9028c25f6b2a826520cc https://doi.org/10.4028/www.scientific.net/ssp.103-104.241 Zobrazit plný text záznamu