Autor: |
Rolf Sauer, C. Ehret, J.M. Schneider, Wolfgang Limmer, H. Heinecke, J. Gerster |
Rok vydání: |
1997 |
Předmět: |
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Zdroj: |
Microelectronics Journal. 28:985-992 |
ISSN: |
0026-2692 |
DOI: |
10.1016/s0026-2692(96)00138-3 |
Popis: |
Local carrier transport properties of Si-doped GaAs layers on ridge structures exhibiting (111)A and (111)B sidewalls are investigated. The layers were grown by molecular beam epitaxy at different substrate temperatures and As/Ga flux ratios. Using spatially resolved Raman spectroscopy we determine the type and density of free charge carriers (≥ 5 × 10 17 cm −3 ) in the grown layers on the different index facets from an analysis of the coupled plasmon-longitudinal optical-phonon mode which was calibrated against Hall standards. We demonstrate that on the (100) and (111)B facets the regrown layers are n-type and on the (111)A facets p- or n-type depending on the growth conditions. Line scans of the carrier density show that the (100)/(111)A/(100) facet transition forms a graded lateral n-p-n junction. Spatially resolved photoluminescence measurements confirm our findings. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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