Direct modulation of InAs/GaAs quantum dot lasers on silicon at 60 °C

Autor:	Mitsuru Sugawara, Reio Mochida, Yasuhiko Arakawa, Satoshi Iwamoto, Katsuaki Tanabe, Keizo Takemasa, Yuan-Hsuan Jhang
Rok vydání:	2016
Předmět:	Materials science Silicon business.industry Hybrid silicon laser chemistry.chemical_element Direct bonding Laser law.invention Optics chemistry Quantum dot laser Quantum dot law Optoelectronics business Tunable laser Quantum well
Zdroj:	2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).
DOI:	10.1109/iciprm.2016.7528534
Popis:	We demonstrated the direct modulation in InAs/GaAs quantum dot (QD) lasers on Si. The Fabry-Perot QD laser was integrated on Si by direct bonding method, and a cavity was formed by the as-cleaved facets without HR/AR coatings. The bonded laser was operated at room temperature with a threshold current of 40 mA and a maximum output power of 30 mW (single facet). A 6 Gbps non-return-to-zero (NRZ) signal was successfully demonstrated at 60 °C.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5fdb734e538cef0483a703bb64eaa06b https://doi.org/10.1109/iciprm.2016.7528534 Zobrazit plný text záznamu