Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems

Autor:	T. Frey, Donat Josef As, J. R. L. Fernandez, Iuri Muniz Pepe, C. Moyses Araujo, Bo E. Sernelius, Clas Persson, Rajeev Ahuja, Valmir Antonio Chitta, Klaus Lischka, A. Tabata, Eduardo Abramof, José R. Leite, D. Schikora, A. Ferreira da Silva
Rok vydání:	2001
Předmět:	Materials science Condensed matter physics Band gap Inorganic chemistry Si doped Condensed Matter Physics Inorganic Chemistry Metal Nonmetal Electrical resistivity and conductivity Impurity visual_art Materials Chemistry visual_art.visual_art_medium
Zdroj:	Journal of Crystal Growth. 231:420-427
ISSN:	0022-0248
Popis:	The critical impurity concentration Nc of the metal-nonmetal (MNM) transition for the cubic GaN, InN and AlN systems, is calculated using the following two different criteria: vanishing of the dono ...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5fd51eb00076c9b9adfe0a0653825776 https://doi.org/10.1016/s0022-0248(01)01473-7 Zobrazit plný text záznamu Full Text from ScienceDirect