Farfield Under Small Scattering Angle in the Rectangular Ag–Si–SiO2 Cavity

Autor:	Yang Zou, Huangqing Liu, Li-qun Wen, Yan-ping Xiao, Shu Li, Shu-gui Chong
Rok vydání:	2019
Předmět:	Materials science Silicon Scattering business.industry Biophysics Finite-difference time-domain method Physics::Optics chemistry.chemical_element 02 engineering and technology Function (mathematics) Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Biochemistry 010309 optics Condensed Matter::Materials Science Wavelength Transverse plane Amplitude Optics chemistry 0103 physical sciences 0210 nano-technology business Biotechnology
Zdroj:	Plasmonics. 14:1385-1392
ISSN:	1557-1963 1557-1955
Popis:	In this paper, the farfield under small scattering angle was investigated in the rectangular Ag–Si–SiO2 cavity by FDTD. The simulation results showed that Re(E) of the farfield was related to the monitoring wavelength and was a function of monitoring wavelengths. Moreover, in the rectangular Ag–Si–SiO2 cavity, the amplitude of Re(E) changed as the silicon height d varied, and maximum amplitude A of Re(E) could be approximated as the functions of transverse length l and thickness t of silver film under small scattering angle. Re(E) was independent of the transverse length w2 and the longitudinal length d of the cavity in RCM and was also irrelevant with the dielectric constant of silver films. The amplitude A of Re(E) increased as l and t of silver film increased.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5fd4ec83b451b915f1ce341b7cba124d https://doi.org/10.1007/s11468-019-00928-7 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
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