N Type Microcrystalline Silicon Oxide Layer Effect in P-I-N Ultra-Thin Film Solar Cell

Autor: Mohammed Belmekki, Wafa Hadj Kouider, Abbas Belfar, Hocine Ait-Kaci
Rok vydání: 2020
Předmět:
Zdroj: ICREEC 2019 ISBN: 9789811554438
DOI: 10.1007/978-981-15-5444-5_43
Popis: Light trapping plays an important role in improving the power conversion efficiency of thin-film hydrogenated amorphous silicon solar cells. Therefore, doped microcrystalline silicon oxide has received much attention due to its versatile applicability in photovoltaic technologies. It is a mixed phase material of an oxygen rich amorphous silicon oxide phase, which supplies low refractive index, a wide band gap and high optical transparency and the doped microcrystalline silicon phase, which guaranties agreeable electrical conductivity. In order to evaluate the microcrystalline silicon oxide based single junction p-i-n solar cell efficiency, a simulation study is executed using AMPS-1D (Analysis of Microelectronic and Photonic Structures) simulator.
Databáze: OpenAIRE