Electrical properties and B depth profiles of in-situ B doped Si films grown by ECR Ar plasma CVD without substrate heating
| Autor: | Masao Sakuraba, Shigeo Sato, Naofumi Ueno, Hisanao Akima, Koya Motegi, Yoshihiro Osakabe |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Mechanical Engineering Doping Analytical chemistry 02 engineering and technology Plasma Substrate (electronics) Chemical vapor deposition 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Amorphous solid Mechanics of Materials 0103 physical sciences General Materials Science 0210 nano-technology Deposition (law) Diode |
| Zdroj: | Materials Science in Semiconductor Processing. 70:50-54 |
| ISSN: | 1369-8001 |
| Popis: | In-situ B doping in epitaxial and amorphous Si films was investigated by low-energy electron-cyclotron-resonance (ECR) Ar plasma chemical vapor deposition (CVD) by using SiH4 and B2H6 without substrate heating. For a B-doped epitaxial Si film, high carrier concentration of 7.1×1019 cm−3 with Hall mobility of 19 cm2 V−1 s−1 was measured at room temperature. Moreover, good rectifying characteristics was obtained for a Si p+/n junction diode. Especially for exploration of a heavily B-doped Si film, depth profiling results show that B concentration tends to be smaller near the initial substrate surface. Finally, effective control of B segregation by atomic-order B pre-deposition or by Si buffer deposition on initial Si(100) has been demonstrated to achieve heavy B doping in whole region of deposited Si film. |
| Databáze: | OpenAIRE |
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