Silicon Deposition on 3C-SiC Seeds of Different Orientations
| Autor: | Yeghoyan Taguhi, Ferro Gabriel, Souliere Veronique, Alassaad Kassem |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Silicon Carbonization Mechanical Engineering Analytical chemistry chemistry.chemical_element Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Deposition temperature chemistry Mechanics of Materials 0103 physical sciences General Materials Science Crystallite 0210 nano-technology Layer (electronics) Deposition (chemistry) Hillock |
| Zdroj: | Materials Science Forum. 897:87-90 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.897.87 |
| Popis: | Silicon deposition on 3C-SiC seeds was studied as a function of seed orientations and thicknesses. The 3C-SiC seeds were grown on silicon substrates of (100), (110), (111) and (211) orientations by standard two-step CVD (low temperature carbonization followed by high temperature epitaxy). Then, the Si layers were grown onto these SiC seeds at various temperatures. Almost all the conditions gave polycrystalline deposit. At high deposition temperature (1350°C) the Si deposit was composed of separated hillocks and was never fully covering the 3C-SiC seeds. Lower deposition temperatures (≤ 1100°C) allowed obtaining silicon full coverage but not full epitaxy. Focusing on (100) orientation, it was shown that (100) Si deposit could be obtained but only on the as carbonized 3C-SiC sample, i.e. with the thinner SiC layer. |
| Databáze: | OpenAIRE |
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