A high performance deep submicron MOSFET structure with self-aligned selectively grown W-gate (SAW)

Autor:	Kwang Myoung Rho, Yo Hwan Koh, Seong Min Hwang, Dai-Hoon Lee, Chan Kwang Park, Myoung Jun Chung
Rok vydání:	2002
Předmět:	Materials science Channel length modulation Subthreshold conduction Gate oxide business.industry MOSFET Electrical engineering Optoelectronics Short-channel effect Drain-induced barrier lowering business Subthreshold slope Threshold voltage
Zdroj:	1995 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers.
DOI:	10.1109/vtsa.1995.524701
Popis:	A novel structure for high performance deep submicron MOSFETs, which is called the SAW (Self-Aligned selectively grown W-gate) MOSFET, is proposed. The SAW MOSFET structure has extremely low gate resistance due to the use of tungsten as gate electrode and low source/drain junction capacitance due to the threshold voltage adjustment implantation into the channel region only. In order to get a steep subthreshold slope, moderate threshold voltage, and high saturation current, a retrograde shaped channel profile is also used.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5fbe645ebb20254f71a6bcafe54bd57b https://doi.org/10.1109/vtsa.1995.524701 Zobrazit plný text záznamu