Erratum: 'Ion-etch produced damage on InAs(100) studied through collective-mode electronic Raman scattering' [J. Vac. Sci. Technol. B 18, 144 (2000)]

Autor:	Paul W. Bohn, L. H. Greene, T. A. Tanzer, I. V. Roshchin
Rok vydání:	2000
Předmět:	symbols.namesake X-ray photoelectron spectroscopy Phonon Chemistry Annealing (metallurgy) Collective mode General Engineering symbols Atomic physics Raman spectroscopy Raman scattering Surface states Ion
Zdroj:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:2030
ISSN:	0734-211X
DOI:	10.1116/1.1306300
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5fbcd24eae250c7a5775de7017556e2a https://doi.org/10.1116/1.1306300 Zobrazit plný text záznamu