Determination of AlGaN/GaN power transistor junction temperature for radar applications

Autor:	Guillaume Brocero, Jean-Pierre Sipma, Philippe Eudeline, Yannick Guhel, Bertrand Boudart
Rok vydání:	2016
Předmět:	Materials science business.industry Wide-bandgap semiconductor Gallium nitride Semiconductor device law.invention chemistry.chemical_compound chemistry law Silicon carbide Optoelectronics Junction temperature Power semiconductor device Radar business Power density
Zdroj:	2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON).
DOI:	10.1109/mikon.2016.7492061
Popis:	AlGaN/GaN technology provides a lot of power density, which causes a thermal effect and degrades the whole electronic characteristics of the component. The local heating source appears when the component is biased. Moreover, radar applications work in pulsed rate and emphasize the impact of this source. So it is important to measure the temperature in transient mode, close to this local source as reliable as possible In this paper we present a review of the more reliable methods for time-resolving the thermal characterization of semiconductor devices for radar applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5fb7791790f83a0cfab8641990d5e720 https://doi.org/10.1109/mikon.2016.7492061 Zobrazit plný text záznamu