| Autor: |
C. Wang, John P. Snyder, J. R. Tucker |
| Rok vydání: |
1998 |
| Předmět: |
|
| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| Popis: |
PtSi source/drain Schottky barrier MOSFETs have been fabricated at sub-50-nm channel lengths with 19-angstrom gate oxide. These p-channel devices employ gate-induced field emission through the PtSi approximately 0.2-eV hole barrier to achieve current drives of approximately 200 (mu) A/micrometer at supply voltage of 1.0 V. Delay times measured by the CV/I metric extends scaling trends of conventional p-MOSFETs to approximately 2 - 3 ps. Thermal emission over the low Schottky barrier limits on/off currents to approximately 25 - 50 in undoped devices at 300 K, while ratios of approximately 107 are measured at 77 K. On/off ratios at room temperature can be improved to approximately 103 by implanting a thin layer of fully-depleted donors beneath the active region or use of ultra-thin SOI substrates. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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