Fast Active-Quenching Circuit for Free-Running InGaAs(P)/InP Single-Photon Avalanche Diodes
| Autor: | Yongfu Li, Junliang Liu, Wang Ying, Lei Ding, Tingfa Zhang, Jiaxiong Fang, Qingpu Wang |
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| Rok vydání: | 2016 |
| Předmět: |
Quenching
Avalanche diode Materials science business.industry Heterojunction bipolar transistor Detector Bipolar junction transistor 02 engineering and technology Integrated circuit Condensed Matter Physics Atomic and Molecular Physics and Optics law.invention 020210 optoelectronics & photonics Single-photon avalanche diode law 0202 electrical engineering electronic engineering information engineering Optoelectronics Electrical and Electronic Engineering business Diode |
| Zdroj: | IEEE Journal of Quantum Electronics. 52:1-6 |
| ISSN: | 1558-1713 0018-9197 |
| DOI: | 10.1109/jqe.2016.2597798 |
| Popis: | A fast active-quenching circuit (FAQC) based on SiGe Hetero-junction Bipolar Transistor (HBT) and InGaP/GaAs HBT integrated circuits is designed for use with free-running single-photon avalanche diodes (SPADs). The performances of both InGaAsP/InP SPAD and InGaAs/InP SPAD are tested. Results show that the typical avalanche duration using the FAQC is 1.6 ns, and the total afterpulse probability is lower than 10% when the hold-off time is above 1 μs at 1.5 V excess bias or 10 μs at 3.0 V excess bias. This result is comparable to recently developed negative-feedback avalanche diodes. The FAQC is based on commercially available integrated circuits and can be used with typical SPADs, providing a low-cost approach to build a free-running single-photon detector. |
| Databáze: | OpenAIRE |
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