Annealing effect of SnO2 films prepared by chemical vapor deposition: Evidence of chlorine removal by auger electron spectroscopy and rutherford back-scattering spectrometry studies
Autor: | K. Kim, T.G. Finstad, R.W. Linton, X.B. Cox, W.K. Chu |
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Rok vydání: | 1985 |
Předmět: | |
Zdroj: | Solar Cells. 13:301-307 |
ISSN: | 0379-6787 |
DOI: | 10.1016/0379-6787(85)90023-7 |
Popis: | Using a rather simple chemical vapor deposition apparatus, transparent conducting tin oxide films were fabricated through the decomposition of SnCl 4 ·5H 2 O. The films showed good electrical properties but high chlorine contamination. We have found that the chlorine can be removed by annealing at 500 K in a hydrogen ambient. This has been established by Auger electron spectroscopy and Rutherford backscattering spectrometry. |
Databáze: | OpenAIRE |
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