Space-Charge-Limited Currents in n-i-n Devices Incorporating Glow-Discharge and Hot-Wire Deposited a-Si:H
| Autor: | F. A. Rubinelli, Edith C. Molenbroek, C.H.M. van der Werf, K. F. Feenstra, Ruud E. I. Schropp |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Glow discharge
Materials science Silicon business.industry media_common.quotation_subject chemistry.chemical_element Molecular physics Asymmetry Space charge Symmetry (physics) Metal chemistry Electrical resistivity and conductivity visual_art visual_art.visual_art_medium Optoelectronics business Layer (electronics) media_common |
| Zdroj: | MRS Proceedings. 467 |
| ISSN: | 1946-4274 0272-9172 |
| DOI: | 10.1557/proc-467-717 |
| Popis: | Space-charge-limited currents have been examined in a wide variety of n-i-n devices. If the devices were completely symmetric, the current-voltage characteristics would be identical for positive and negative bias, but in several devices differences between the two polarities were observed. In order to understand in which part of the device these differences originate, the influence of the contacts and interfaces on the JV characteristics were examined by using different metal top contacts, different n-layers and different i-layers. Ag and Al top contacts gave minor differences between the polarities, whereas with Cr contacts no differences were observed. Incorporation of a defect layer in the i-layer results in asymmetric JV curves. We have observed a small asymmetry in an experimental device, and a large asymmetry using AMPS modeling. N-i-n devices appear to be a sensitive probe for interface defects. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink