Theoretical analysis on the energy band properties of N- and M-structure type-II superlattices
| Autor: | Yun Xu(徐云), Ya-nan Du(杜雅楠), Guo-feng Song(宋国峰) |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Band gap Superlattice Energy level splitting 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Barrier layer Effective mass (solid-state physics) 0103 physical sciences General Materials Science Electrical and Electronic Engineering 0210 nano-technology Electronic band structure p–n junction Dark current |
| Zdroj: | Superlattices and Microstructures. 145:106590 |
| ISSN: | 0749-6036 |
| DOI: | 10.1016/j.spmi.2020.106590 |
| Popis: | The electronic band structure of conventional InAs/GaSb superlattices (SLs), N- and M-structure were investigated by 8-band k·p method. A good agreement between the theoretical calculation and experimental results was obtained. Compared with the conventional structure, the band gap and effective mass of N- and M-structure both increased with the thickness of AlSb layers raising. The splitting energy between first heavy hole band (HH1) and first light hole band (LH1) increased in N-structure, but firstly raised and then reduced in M-structure. The impact of changing the position of AlSb barrier in M-structure is also studied. By altering the position of the barrier layer, the wave function overlaps can be controlled at the InAs/GaSb or GaSb/InAs interface in PN junction. By comparing the three type SLs, we found that N- and M-structure can obviously suppress dark current and enhance wave function overlap. Besides, M-structure can be more alternative in structure design. |
| Databáze: | OpenAIRE |
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