Intersubband transition in p-type wurtzite GaN/AlGaN quantum well

Autor:	Seoung-Hwan Park, Woo-Pyo Hong, Bonghwan Kim, Doyeol Ahn, Chan-Yong Park, Jong-Jae Kim
Rok vydání:	2018
Předmět:	Materials science Absorption spectroscopy business.industry Wide-bandgap semiconductor Heterojunction Gallium nitride chemistry.chemical_compound Wavelength chemistry Optoelectronics business Absorption (electromagnetic radiation) Quantum well Wurtzite crystal structure
Zdroj:	2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).
DOI:	10.1109/nusod.2018.8570227
Popis:	The intersubband (ISB) transition of wurtzite (WZ) p-type GaN/AlGaN quantum well (QW) structures was investigated as a function of Al content in barrier using the multiband effective-mass theory. The peak wavelength of the TE-polarization absorption spectrum is rapidly redshifted with decreasing Al content in the barrier. The peak intensity of the TE-polarization absorption spectrum is shown to be similar to that of the TM-polarization absorption spectrum. We find that the peak wavelength of the TE-polarized absorption spectrum of 1.55 μm is possible even for the QW structure with a small Al content of x=0.7. We expect that a p-type WZ GaN/AlGaN heterostructure is attractive for a photodetector application for fiber-optic communications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5f8fca4f20973762b67113ae887ee78a https://doi.org/10.1109/nusod.2018.8570227 Zobrazit plný text záznamu