1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current
| Autor: | Kai Cheng, Huaxing Jiang, Peng Xiang, Renqiang Zhu, Qifeng Lyu, Kei May Lau |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Passivation Transistor 01 natural sciences Subthreshold slope Electronic Optical and Magnetic Materials Threshold voltage law.invention law Electric field 0103 physical sciences Saturation (graph theory) Breakdown voltage Electrical and Electronic Engineering Fermi gas |
| Zdroj: | IEEE Transactions on Electron Devices. 68:653-657 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2020.3043213 |
| Popis: | In this article, we demonstrate normally-OFF p-GaN gate high electron mobility transistors (HEMTs) on Si with an ultrahigh breakdown voltage ( ${V}_{BR}$ ) and excellent saturation drain current. Benefiting from the optimized material growth of high-resistivity buffer, effective Al2O3 surface passivation with suppressed OFF-state leakage current, and proper management of the electric field on the p-GaN gate edge, the device with a gate–drain distance of $18.5~\mu \text{m}$ exhibits a ${V}_{BR}$ of 1344 V at ${I}_{D}$ of $1~\mu \text{A}$ /mm with grounded substrates, the highest among all the reported normally-OFF GaN-on-Si transistors. Well-restored high-density 2-D electron gas and efficient gate modulation enable the device with a high ${I}_{DS,max}$ of 450 mA/mm and a low specific ON-resistance of 3.92 $\text{m}\Omega \cdot $ cm2. Moreover, a large threshold voltage of 1.6 V (at ${I}_{D}$ of $10~\mu \text{A}$ /mm) and a steep subthreshold slope of 66 mV/dec have been achieved, with negligible threshold voltage shift upon long-term forward gate stress at 150 °C. These results illustrate the great potential of p-GaN gate HEMTs on Si for beyond 600-V applications. |
| Databáze: | OpenAIRE |
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